发明名称 Semiconductor memory device
摘要 A semiconductor memory device is provided for minutely changing a refresh interval according to a detected temperature and thereby lowering its power consumption. A temperature detector detects a temperature of a chip and outputs the corresponding temperature signal. A reference temperature signal output unit outputs the corresponding reference temperature signal with each of different reference temperatures to be compared with the chip temperature according to a selection signal. A temperature comparison unit compares the chip temperature with the reference temperature through the temperature signal and the reference temperature signal. A selection signal output unit outputs the selection signal according to the compared result of the temperature comparison unit. A refresh interval control unit changes the refresh interval according to the compared result of the temperature comparison unit.
申请公布号 US7443754(B2) 申请公布日期 2008.10.28
申请号 US20070704951 申请日期 2007.02.12
申请人 FUJITSU LIMITED 发明人 SAKO ATSUMASA
分类号 G11C11/34;G11C7/00 主分类号 G11C11/34
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