| 摘要 |
A ferroelectric memory device and a method of manufacturing the same are provided to improve polarization and to manufacture many memory cells on the same area. A ferroelectric memory device comprise a gate(21) formed on the upper part of substrate, a channel formation layer(22) on the gate, a ferroelectric layer(23) on the channel formation layer. The ferroelectric layer is composed of inorganic ferroelectric material or a mixture of its solid solution or an organic ferroelectric material.
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