| 摘要 |
An electro chemical plating apparatus and a method thereof are provided to preclude particles on an edge of a wafer and minimize wafer defect rates by changing installation positions of electric contact members and depositing a copper seed layer at an edge of a rear of the wafer. An electro chemical plating apparatus comprises a tank(10), an electrolyte solution supply device(11), a copper anode(12), a wafer(16), clamp cells(25), electric contact members(30), and a transporting rod(28). The electrolyte solution supply device supplies an electrolyte solution(14) into the tank. The copper anode is formed at a lower end of the tank. The wafer is opposed to an upper side of the copper anode to apply voltage of the anode. The clamp cells create an electric field on the wafer. The electric contact members are installed in a predetermined gap from an outermost edge of a rear side of the wafer to the center of the wafer and connect the wafer with the clamp cells electrically. The transporting rod transports and rotates the wafer in the tank.
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