发明名称 LARGE SCALE NANOFIBER EXTRUDER
摘要 1. Large Scale Nanofiber extruder. This device can be used to produce (novel - weakness of current technologies , the fibers they produce are too short) long nanofibers. Among other nanofibers produced we could produce, nano - (metals by melting) copper wires, aluminium, titanium, fiber glass, teflon/resin/rubber/polymer/nanotube/nanoparticles/strategically spread out carbon nanofibers and other such composite. As long as the material is reducible in to fluid (or will fit through the extruder hole - ideally even consistency) whether by heat - molt en metal or solvent/enzymes/catalysts. You could shred the input material and melt gas torch or plasma torch to a melting temperature of metals and then extrude via a piston or hydraulic press. We can have different sized pistons/hydraulic chambers and different sized extruder heads depending on desired length and diameter of nanofibers/wires and different shaped extruder heads. The extruder (perhaps multiple maybe lined up horizontally - producing multiple nanofiber/wires batches at once) head(s) can be made of platinum, to withsta nd the heat and pressure. We could consider a diamond extruder head, for metals such as stainless steel and platinum nanowires. As the extruded wire comes out, the nanowire could be covered with polymer o r resin or rubber to make the material less fragile. The nano copper - the minimum diameter that copper is still at an ideal malleability - or mixed with aluminium - wire which can be used to make nano circuit boards. We could extrude long lengths of very thin fiber glass for computer communication. Nano Fibers are light yet far stronger than any existing fibers, they can in addition to micro wiring also in better textile material, aerospace and planes, boats, cars, computing, medical, spray - like fiber glass on to resin (mixed with monomer - polymer) to reinforce (while maintaining flexibility) anything that requires fibers (could be spun) that are durable (yet either rigid or flexible/malleable depending on mix of materials used)... 2. Nano switch/diode/semiconductor. First we spread (by sorting mechanism or vibrating) the nanotubes or nano particles or perhaps even nano fibers (among other materials we are considering carbon na no tubes and even nano silicon wafer gallium arsenide, germanium, hafnium,) evenly on possibly a dimpled tray, where each dimple on the tray only allows one nanotube to fit in each. Then to run a static (electric or magnetic - well calibrated) charge underneath the tray that makes the nanotubes line up (repelled from the bottom). Then we use possibly a nanocop per head that has solder to bind the + side of the nanotube to the copper head Once created the nano switch/diode/semiconductor works as below (see DRAWING 3.): 1. nano switch/diode/semiconductors have negative charge connected to negati ve charge of battery therefore they repel. 2. nano switch/diode/semiconductors have negative charge connected to positi ve of the battery so the current passes. 3. battery. 4. charges positive/negative of the battery. 5. Centre layer adds additional layer of repelling charges (see 1.) and amphlyfies the current on the other side. This device could be adapted for use in semiconductors, diodes, transistors, integrated circuits, computers, cellular phones, digital audioplayers, other electronic devices. This invention, can also be used in: Integrated circuits; Laser; Light-emitting diode; Photodiode; Photoelectric devices; Semiconductor diode; Semiconductor rectifier; Transistor; Varistor...</SDOAB >
申请公布号 CA2584359(A1) 申请公布日期 2008.10.04
申请号 CA20072584359 申请日期 2007.04.04
申请人 VOON, GERARD G. V. 发明人 VOON, GERARD
分类号 B21C23/01;B21C23/08;B30B11/22;H01L21/00 主分类号 B21C23/01
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