| 摘要 |
A method for forming a semiconductor device is provided to remove a recess gate region formed on an isolation layer by forming a recess gate region while a process for forming an isolation layer is not completed. A first hard mask pattern for defining an active region(120) is formed in a semiconductor substrate. The semiconductor substrate is etched to form a trench for forming an isolation layer by using the first hard mask pattern as a mask. An oxide layer for isolation is formed in the trench. The first hard mask pattern is removed. A second hard mask pattern for defining a recess gate region(160b) is formed on the semiconductor substrate. The active region and the oxide layer are etched by using the second hard mask pattern as a mask. A CMP process is performed to remove the recess gate region formed on the second hard mask pattern and the oxide layer and form an isolation layer(135a) for defining the active region. A gate(200) is formed on the recess gate region. The first hard mask pattern can have a stack structure of a pad oxide layer and a pad nitride layer. The second hard mask pattern can have a stack structure of a barrier oxide layer and an amorphous carbon layer.
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