| 摘要 |
A method for forming an isolation layer of a semiconductor device is provided to prevent asymmetrical stress from being applied to a semiconductor substrate by making an isolation layer have the same right and left breadths in a peripheral circuit region. A semiconductor substrate is divided into a cell region and a peripheral circuit region, and isolation layers for defining active regions are respectively formed in the cell region and the peripheral circuit region. The isolation layer in the peripheral circuit region has the same widths in its right and left sides so that the compressive stress of the right and left sides of the active region doesn't exist. The isolation layer can be made of an SOD(spin on dielectric).
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