| 发明名称 |
METHOD AND APPARATUS FOR PROVIDING AN INTEGRATED CIRCUIT HAVING P AND N DOPED GATES |
| 摘要 |
A method and apparatus providing an integrated circuit having a plurality of gate stack structures having gate oxide layers with differing thicknesses and nitrogen concentrations and gate electrodes with differing conductivity types and active dopant concentrations.
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| 申请公布号 |
KR20080084849(A) |
申请公布日期 |
2008.09.19 |
| 申请号 |
KR20087018632 |
申请日期 |
2008.07.29 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MOULI CHANDRA;PAREKH KUNAL R. |
| 分类号 |
H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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