| 摘要 |
A method for cleaning a wafer is provided to prevent the generation of a water mark and the degradation of a gate dielectric by cleaning a wafer including an isolation layer being formed thereon through an FRD(dHF and rinsing dryer) manner. A wafer with an isolation layer of an SOD(Spin On Dielectric) layer being formed thereon is dipped in a bath in which a first deionized water is contained in a lower portion and an IPA(Isopropyl Alcohol) of a gaseous state is filled in an upper space. The first deionized water is discharged from the bath to the outside, and then the wafer is cleaned by supplying a low selectivity chemical solution of which HF and an amine-based material are mixed with one of a propylene glycol solution and an ethylene glycol solution having a low selectivity with respect to the SOD layer. The low selectivity chemical solution is discharged from the bath to the outside, and then a second deionized water is supplied to the bath to rinse the wafer. The wafer is raised from the second deionized water to be dried.
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