| 摘要 |
A method for manufacturing a bit line of a semiconductor device is provided to lower wire resistance by forming an amorphous tungsten seed layer and a bulk tungsten layer. A barrier layer is formed on a semiconductor wafer(100). An amorphous tungsten seed layer(104) is formed on the barrier layer. A bulk tungsten layer(106) is formed on the amorphous tungsten seed layer. The formation of the amorphous tungsten seed layer is performed by supplying a cooling gas to a backside so as to improve uniformity of the amorphous tungsten seed layer. The amorphous tungsten seed layer is formed by sequentially supplying WF6 gas and B2H6 gas under 375 to 400 °C according to an ALD(Atomic Layer Deposition) process. The amorphous tungsten seed layer has a thickness of 30 to 50 Å. Argon gas is used as the cooling gas. After the barrier layer is fabricated, a tungsten thin film is deposited before the amorphous tungsten seed layer is formed on the barrier layer.
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