发明名称 STACK SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE HAVING THE DEVICE AND METHOD OF FABRICATING THE DEVICE
摘要 A stacked semiconductor device is provided to effectively increase integration of a semiconductor device and a semiconductor package by forming a semiconductor device in one process wherein a plurality of unit device layers are stacked in the semiconductor device. A lower device(D1) is positioned on the lower surface of an intermediate insulation layer(300). A lower pad(210) is electrically connected to the lower device. An upper device(D2) is positioned on the upper surface of the interlayer dielectric. An upper pad(410) is electrically connected to the upper device. The lower pad can be electrically connected to the upper pad. The lower and upper devices can have a mutually reversed layer structure.
申请公布号 KR20080084231(A) 申请公布日期 2008.09.19
申请号 KR20070025632 申请日期 2007.03.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, IN YOUNG;CHUNG, HYUN SOO;CHUNG, MYUNG KEE;KIM, NAM SEOG
分类号 H01L23/12 主分类号 H01L23/12
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