| 摘要 |
A semiconductor device is provided to lower the aspect ratio of a metal interconnection by forming an O3-TEOS layer with a plenty of ozone on a semiconductor substrate having a metal interconnection. A metal interconnection is formed in a semiconductor substrate(100). An O3-TEOS layer is formed along the surface of the metal interconnection and the semiconductor substrate by a HARP(high aspect ratio process) method. A PSG(phosphosilicate glass) layer is formed on the O3-TEOS layer to fill a gap between the metal interconnections. The O3-TEOS layer can have more O3 content than that of TEOS. The PSG layer can contain phosphorous of 2-10 weight percent.
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