发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND RECORDING MEDIUM
摘要 A substrate processing apparatus, a substrate processing method and a recording medium are provided to heat and cool a substrate supported by a support member by causing a second temperature adjust member to be in contact with and separate from the support member. A substrate processing apparatus comprises a support member(47), a first temperature adjusting member(75), and a second temperature adjusting member(80). The support member supports the substrate in the process chamber. The first temperature adjusting member is in thermal contact with the support member. The second temperature adjusting member is capable of thermally coming into contact with and separating from the support member. The first temperature adjusting member and the second temperature adjusting member are adjusted to different temperatures respectively.
申请公布号 KR20080084743(A) 申请公布日期 2008.09.19
申请号 KR20080023969 申请日期 2008.03.14
申请人 TOKYO ELECTRON LIMITED 发明人 ONISHI TADASHI;FUJII HIROSHI
分类号 H01L21/302 主分类号 H01L21/302
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