| 摘要 |
A semiconductor memory device is provided to assure time required in writing data into a memory cell, even when a bit line is short, as suppressing the increase of area. A semiconductor memory device determines data read time required for reading data from a memory cell, through read operation of a replica cell connected to a replica word line and a replica bit line having equal load to a bit line connected to the memory cell. The semiconductor memory device comprises a write control signal generation part(80). The write control signal generation part is connected to a logic gate receiving a replica word line enable signal generated according to a driving signal driving the replica word line, and generates a write control signal to determine data write time requested to write data in the memory cell, on the basis of the replica word line enable signal.
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