| 摘要 |
A semiconductor device and a method of manufacturing the same are provided to shorten TAT(Turn Around Time) of the formation of a through-hole by forming a first large opening except for a portion which contacts a pad electrode. A semiconductor device comprises a semiconductor substrate(10), a pad electrode(12), a first opening(H1), a second opening(H2), an insulating layer(20), and a conductive layer(21). The semiconductor substrate has first and second surfaces opposite each other. The first surface is an active surface provided with an electronic element. The pad electrode is formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface. The first opening extends from the second surface of the semiconductor substrate toward the pad electrode so as not to reach the first surface of the semiconductor substrate. The second opening, which is formed to reach the pad electrode from a bottom surface of the first opening, has a diameter smaller than that of the first opening. The insulating layer is formed to cover sidewall surfaces of the first opening and the second opening. The conductive layer is formed inside of the insulating layer to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening. |
