METHOD OF FORMING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to reduce a depositing amount of an initial dielectric layer by forming a mask layer on the dielectric layer before a spacer is formed. A dielectric layer(110) is formed on a semiconductor substrate(100). A first mask layer(120) is formed on the dielectric layer. Contact holes, which pass through the first mask layer and the dielectric layer, are formed. Spacers(145) are formed at sidewalls of the contact holes. Metal contacts are contacted to the spacers. The metal contacts gap-fill the contact holes. When the spacers are formed, a second mask layer is formed to cover the first mask layer and the sidewall and a bottom surface of the contact hole. An anisotropic etching process is performed on the second mask layer. The first mask layer is formed of a material same as the second mask layer. When the metal contacts are formed, a metal layer is formed to cover the first mask layer and to gap-fill the contact hole. A first planarization process is performed to remove the metal layer on the first mask layer.