SOI DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

An SOI(Silicon On Insulator) device and a method for manufacturing the same are provided to obtain a region for dissipating heat generated when a semiconductor device is operated toward a silicon substrate by forming an SOI substrate partially. A silicon substrate(100) is divided into a cell region and a peripheral circuit region that have active regions and isolation regions. An oxide layer(110) is formed on the silicon substrate to expose each isolation region at the cell region and the peripheral circuit region. An epi layer(120) is formed on the isolation layers of the silicon substrate and the oxide layer. An isolation layer(130) is formed on the epi layer part of each isolation region at the cell region and the peripheral circuit region of the silicon substrate. A gate(140) is formed on the epi layer part of each active region at the cell region and the peripheral circuit region of the silicon substrate. A source/drain region(150) is formed in the epi layer at both sides of the gate. A part of the oxide layer formed at a partial active region of the peripheral circuit region of the silicon substrate is removed, so that the silicon substrate and the epi layer are contacted to each other.