| 摘要 |
A method for fabricating a semiconductor device is provided to prevent a gate from leaning by reducing stress by an annealing process performed before an etch process for forming a gate. A gate oxide layer(12), a gate polysilicon layer, a diffusion preventing layer, a gate tungsten layer and a gate hard mask layer are formed on a semiconductor substrate(10). An annealing process is performed. The resultant structure is selectively etched to form a gate(26) by a photolithography process using a gate mask. After the process for forming the gate oxide layer, an oxynitride layer(14) can be formed on the gate oxide layer by a nitridation process using plasma.
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