发明名称 HIGH FLATNESS TRANSPARENT CONDUCTIVE THIN FILMS AND ITS MANUFACTURING METHOD
摘要 A manufacturing method of a high flatness transparent conductive film is provided to manufacture a transparent conductive film with a flat surface that can be used for organic light emitting diodes through a new process that is a multilayer process method as an inexpensive and general DC-magnetron sputtering method. A manufacturing method of a transparent conductive film used in flat panel displays using DC magnetron sputtering comprises the steps of: forming a first layer on a substrate by magnetron sputtering at a high process pressure of 0.5 to 1.2 Pa under an argon gas atmosphere into which oxygen is not added at room temperature; forming a second layer on the first layer continuously by the magnetron sputtering at a low process pressure of 0.1 to 0.4 Pa under an atmosphere containing 0.4% of oxygen relative to argon at room temperature; and heat-treating a multilayer thin film comprising the first layer and the second layer under the non-reactive gas atmosphere. The heat-treatment step is performed by heat-treating the multilayer thin film at a temperature of 100 to 350 deg.C under a pressure of 10^-3 Pa to 10^-5 Pa. The first layer is formed by forming an ITO thin film with a thickness of 30 to 90 nm in the first layer forming step, and the second layer is formed by forming an ITO(Indium Tin Oxide) thin film with a thickness of 60 to 120 nm in the second layer forming step.
申请公布号 KR100859148(B1) 申请公布日期 2008.09.19
申请号 KR20070028617 申请日期 2007.03.23
申请人 HEE SUNG METAL LTD. 发明人 KIM, KWAN SU;YANG, SEUNG HO;CHO, KI TAEK
分类号 C23C14/35 主分类号 C23C14/35
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