| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to prevent a pattern bridge caused by the proximity effect between patterns by etching a hard mask layer pattern of a line shape to make an island pattern. A method for forming a pattern of a semiconductor device includes the steps of: forming a hard mask layer first pattern of a line/space shape on a semiconductor substrate(100) including an etched layer; forming a photoresist pattern of a line/space shape which crosses the hard mask layer first pattern; forming a hard mask layer second pattern by etching the hard mask layer first pattern with the photoresist pattern as a mask; removing the photoresist pattern; forming an etched layer pattern(110a) by etching the etched layer with the hard mask layer second pattern as a mask.</p> |
