| 摘要 |
A semiconductor wafer is provided to mitigate a warpage phenomenon of a wafer by including a stress reducing pattern for reducing the wafer stress caused by a material layer. An active surface(30) and an inactive surface(35) are defined in a wafer. A material layer(10) in which an interlayer dielectric(11), a first passivation layer(12) and a second passivation layer(13) are sequentially stacked is formed on the inactive surface of the wafer. A stress reducing pattern(40) is formed on the inactive surface to reduce the wafer stress caused by the material layer. A correction layer can be formed on the inactive surface of the wafer to fill the stress reducing pattern.
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