| 摘要 |
A method for forming a gate of a semiconductor device is provided to prevent permeation of chemicals in an etch process and a cleaning process by stacking repeatedly tungsten nitride layers and tungsten layers. A gate insulating layer(212) is formed on a semiconductor substrate(200). A polysilicon layer(214) is formed on the gate insulating layer. A metal silicide layer(216) is formed on the polysilicon layer. A metal layer is formed on the metal silicide layer. A hard mask layer is formed on the metal layer. The metal layer is formed with a stacked structure including amorphous tungsten nitride layers and tungsten layers. The metal silicide layer is formed with a tungsten silicide layer by using a CVD method.
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