| 摘要 |
A semiconductor memory device is provided to set an accurate transistor target, by reducing the variation of the characteristics of a monitoring transistor. According to a semiconductor memory device comprising a first MOS transistor(TR2) to monitor the characteristics of a transistor in a memory chip, a clamp circuit transfers a driving voltage with a second voltage level to a gate of the first MOS transistor as being controlled by a clamp voltage with a first voltage level. The clamp circuit includes a second MOS transistor transferring the driving voltage to the gate of the first MOS transistor in response to the clamp voltage. The clamp voltage with a voltage level above the sum of the operation voltage and a threshold voltage of the second MOS transistor is applied to a gate of the second MOS transistor. |
