| 摘要 |
<p>A method for performing a photolithography process is provided to prevent defects of photoresist layer patterns caused by a time delay between an exposure process and a bake process. A first exposure process having a first process time for a first wafer is performed(S210). A first bake process having a second process time for the first wafer is performed after the first exposure process is performed(S220). A second exposure process for a second wafer is performed before the first bake process is completed(S230). A second bake process for the second wafer is performed(S240). In the exposure process, the second exposure process is performed after the first exposure process is completed when the first process time is longer than or equal to the second process time. In the exposure process, the second exposure process is performed after the second process time when the first process time is shorter than the second process time.</p> |
