| 摘要 |
A semiconductor device supplying charging current to an element to be charged is provided to reduce an amount of holes that flow from a power supply potential node into a first semiconductor region of a second conductivity type through a second semiconductor region of the first conductivity type by including a resistor connected with a power supply potential node and the second semiconductor region of the first conductivity type. A semiconductor device supplying a charging current to a charging-target element comprises a semiconductor layer of a first conductivity type(1), a first semiconductor region of a second conductivity type(2), a second semiconductor region of the first conductivity type(3), and a charge carrier drift restriction portion. The first semiconductor region of a second conductivity type is formed on a main surface of the semiconductor layer and having a first node(N1) coupled to a first electrode of a charging-target element(C) and a second node(N2) coupled to a power supply potential node(NL1) supplied with a power supply voltage. The second semiconductor region of the first conductivity type is formed in a surface of the first semiconductor region at a distance from the semiconductor layer and has a third node(N3) coupled to the power supply potential node. The charge carrier drift restriction portion restricts drift of charge carrier from the third node to the semiconductor layer. The charge carrier drift restriction portion includes a resistor(R) connected between the power supply potential node and the second semiconductor region.
|
