REFLECTION TYPE MASK BLANK FOR EUV LITHOGRAPHY, SUBSTRATE WITH INSPECTION FILM THEREFOR AND INSPECTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a substrate with an inspection film for EUV mask blank which can accurately detect any defects on a substrate, and to provide a substrate with a reflection film using the substrate with an inspection film and an EUV mask blank.

SOLUTION: The substrate with an inspection film is used for manufacturing a reflection type mask blank for EUV lithography. A material of the inspection film is made of at least one selected from a group formed of Si and Cr, and the thickness of the inspection film is 2 to 50 nm. The reflection factor of the inspection film is preferably 40% or more in the entire range of incident angles of 0 to 10 degrees at the inspection wavelength (488 nm).

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