NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a non volatile memory device having a thre dimensional structure and a method of operating the same for storing data using a charge storage layer.

SOLUTION: The non volatile memory device has a semiconductor layer 105, a plurality of upper control gate electrode 130a arranged on the semiconductor layer 105, a plurality of lower control gate electrode 130b arranged under the semiconductor layer 105 alternatively with the plurality of upper control gate electrode 130a, a plurality of control gate electrode 120a interposed between the semiconductor layer 105 and the upper control gate 130a respectively, a plurality of lower charge storage layer 120b interposed between the semiconductor layer 105 and the lower control gate electrode 130b.

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