| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device that has high luminous efficiency and emits high-intensity light. <P>SOLUTION: The nitride semiconductor light-emitting device includes a substrate, a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer which are sequentially laminated on the substrate. The major component of the first conductivity-type nitride semiconductor layer is a nitride semiconductor containing Al and Ga. A third conductivity-type nitride semiconductor layer having an Al composition ratio that is smaller than that of the first conductivity-type nitride semiconductor layer is formed between the first conductivity-type nitride semiconductor layer and the active layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
