NITRIDE-BASED SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a nitride-based semiconductor element in which contact resistance between the nitrogen surface of a nitride-based semiconductor substrate and the electrode can be reduced. SOLUTION: The process for fabricating a nitride-based semiconductor laser element comprises a step for etching the backside (nitrogen surface) of an n-type GaN substrate 1 having wurtzite structure by RIE, and a step for forming an n-side electrode 8 on the backside (nitrogen surface) of the etched n-type GaN substrate 1. COPYRIGHT: (C)2008,JPO&INPIT