| 摘要 |
PROBLEM TO BE SOLVED: To restrain defects generated in the source region or the drain region of a field-effect transistor formed on a semiconductor substrate. SOLUTION: A low concentration layer 11 is formed on the main plane of a semiconductor substrate 1, by forming a gate electrode 7G on the principal plane of a semiconductor substrate 1 and introducing impurities into the semiconductor substrate 1 by using the gate electrode 7G as a mask. Then, a crystallization suppressed region CCR is formed on the main plane of the semiconductor substrate 1, by forming a first side wall 12 and a second sidewall 13 on the side surface of the gate electrode 7G, and carrying out ion implantation of nitrogen, and the like, to the semiconductor substrate 1 with the second sidewall and the gate electrode 7G used as a mask. Thereafter, a high-concentration layer for source and drain is formed on the main plane of the semiconductor substrate 1, after the second sidewall 13 is removed. COPYRIGHT: (C)2008,JPO&INPIT
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