| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element and method of manufacturing the same in which charge detection sensitivity variation caused by stray capacitance in an amplifier region can be prevented. SOLUTION: The solid-state imaging element comprises a photoelectric conversion unit, a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion unit, an FD unit 8 formed on an upper surface of the semiconductor substrate 1 for accumulating the electric charge, and an insulating film formed to cover the charge transfer electrode, and the disclosed method includes the steps of: forming a gate electrode electrically connected with the FD unit 8 and the charge transfer electrode on the semiconductor substrate 1; forming an insulating film 4 to cover the charge transfer electrode and forming wiring 6 connecting the FD unit 8 and the gate electrode through photo-lithography; and forming an opening on the insulating film 4 near the surrounding of the wiring 6 and forming a low dielectric film 12 with a dielectric constant lower than that of the insulating film 4 in the opening. COPYRIGHT: (C)2008,JPO&INPIT
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