发明名称 RAW MATERIAL FOR MANUFACTURING SILICON SINGLE CRYSTAL, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a raw material for manufacturing a silicon single crystal, by simply purifying a raw material not used for the raw material of a silicon single crystal, and to provide a method for manufacturing a silicon single crystal. SOLUTION: A raw crystal for manufacturing the silicon single crystal is pulled by CZ method after fusing the raw material not used as the raw material of a silicon single crystal. Otherwise, after pulling a silicon source crystal by CZ method, the obtained silicon source crystal is fused to pull a silicon single crystal 19 by CZ method. The raw material can be easily and efficiently purified by utilizing a segregation phenomenon of impurities during growing a crystal. A residual solidified material (such as a silicon block 9 remaining in a crucible) in a quartz crucible after a crystal is pulled can be used as the raw material. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008156185(A) 申请公布日期 2008.07.10
申请号 JP20060349563 申请日期 2006.12.26
申请人 SUMCO CORP 发明人 KONDO SOICHIRO;NOMURA YUSUKE
分类号 C30B29/06 主分类号 C30B29/06
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