发明名称 INTEGRATED CIRCUITS WITH CONDUCTIVE FEATURES IN THROUGH HOLES PASSING THROUGH OTHER CONDUCTIVE FEATURES AND THROUGH A SEMICONDUCTOR SUBSTRATE
摘要 A backside contact pad is formed in an integrated circuit, possibly designed initially with just top side contact pads ( 150 C), by forming an opening ( 220 ) through a top side contact pad ( 150 C) and the semiconductor substrate ( 110 ). Conductive material ( 520, 540, 1110, 1130 ) is formed in the opening and in contact with the top side pad. The conductive material also provides a backside contact pad ( 1310 ). Other embodiments are also provided.
申请公布号 US2008164574(A1) 申请公布日期 2008.07.10
申请号 US20080051269 申请日期 2008.03.19
申请人 SAVASTIOUK SERGEY;KOSENKO VALENTIN;ROMAN JAMES J 发明人 SAVASTIOUK SERGEY;KOSENKO VALENTIN;ROMAN JAMES J.
分类号 H01L23/48 主分类号 H01L23/48
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