发明名称 Semiconductor Constructions
摘要 The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
申请公布号 US2008166572(A1) 申请公布日期 2008.07.10
申请号 US20080052124 申请日期 2008.03.20
申请人 发明人 SRIVIDYA CANCHEEPURAM V.;GEALY F. DANIEL;GRAETTINGER THOMAS M.
分类号 B32B9/04;H01L21/02;H01L21/334;H01L21/4763;H01L21/8242;H01L27/108;H01L29/76;H01L29/94;H01L31/119 主分类号 B32B9/04
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