发明名称 |
PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.
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申请公布号 |
US2008164504(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20070857396 |
申请日期 |
2007.09.18 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;PROMOS TECHNOLOGIES INC.;WINBOND ELECTRONICS CORP. |
发明人 |
CHEN WEI-SU;CHEN YI-CHAN;HSU HONG-HUI;LEE CHIEN-MIN;CHAO DER-SHENG;CHEN CHIH-WEI;TSAI MING-JINN |
分类号 |
H01L47/00;H01L21/76 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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