发明名称 |
METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER |
摘要 |
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.
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申请公布号 |
US2008164476(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20080970836 |
申请日期 |
2008.01.08 |
申请人 |
PARK SANG HEE;HWANG CHI SUN;CHU HYE YONG;LEE JEONG IK |
发明人 |
PARK SANG HEE;HWANG CHI SUN;CHU HYE YONG;LEE JEONG IK |
分类号 |
H01L29/10;H01L21/31 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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