发明名称 SMALL SIZE, HIGH GAIN, AND LOW NOISE PIXEL FOR CMOS IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a solid-state CMOS image sensor, specifically a CMOS image sensor pixel which has only two row lines per pixel, pinned photodiode for sensing light, and one or two column lines, and to provide its array. SOLUTION: The pixel does not have an address transistor and the sensing and reset transistors are both MOS p-channel type. This architecture results in a low noise operation with a very small noise operation. In addition, this new pixel architecture allows for the standard CDS signal processing operation, which reduces pixel to pixel non-uniformities and minimizes kTC reset noise. The pixel has high sensitivity, high conversion gain, high response uniformity, and low noise, which is enabled by the efficient 3T pixel layout. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008160133(A) 申请公布日期 2008.07.10
申请号 JP20070330695 申请日期 2007.12.21
申请人 MAGNACHIP SEMICONDUCTOR LTD 发明人 JAROSOLAV HYNECEK
分类号 H01L27/146;H04N5/335;H04N5/341;H04N5/357;H04N5/363;H04N5/369;H04N5/374;H04N5/3745;H04N5/376;H04N5/378 主分类号 H01L27/146
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