| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having BGAs of high reliability. SOLUTION: This production method of the semiconductor device comprises: a process for forming a via hole VH reaching a pad electrode 53 from a second main face of a semiconductor substrate in which on a first main face thereof, the pad electrode 53 is formed; a process for forming an insulating film on the second main face of the semiconductor substrate including the second main face within the via hole VH; a process for forming a buffer layer 60 on the insulating film; a process for etching-removing the insulating layer at the bottom of the via hole VH; a process for forming a wiring layer 64 electrically-connected with the pad electrode 53 through the via hole VH and extending from the via hole VH onto the buffer layer 60; a process for forming a conductive terminal 66 on the wiring layer 64; and a process for dividing the semiconductor substrate into a plurality of semiconductor chips 51A. COPYRIGHT: (C)2008,JPO&INPIT
|
