发明名称 SUBSTRATE PROCESSING DEVICE, METHOD FOR HEATING FOCUS RING, AND METHOD FOR PROCESSING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing device which accurately controls the temperature of a focus ring without causing abnormal discharge or backward flow of high-frequency power while high-frequency power is applied. SOLUTION: A substrate processing device 10 includes: a circular focus ring 24 arranged to surround the peripheral border portion of a wafer W; and a focus ring temperature controller 26 which has a circular induction coil 36 that is located in opposition to the focus ring 24 to generate magnetic force lines upon receiving the power from a power supply rod 38. Resultant magnetic force lines intersect with an induction heating section 40, resulting in eddy current being generated in the induction heating section 40 because of magnetic field induction. Joule heat arising from the eddy current and electrical resistance of the induction heating section 40 heats the induction heating section 40, which leads to self-heating of the focus ring 24. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008159931(A) 申请公布日期 2008.07.10
申请号 JP20060348379 申请日期 2006.12.25
申请人 TOKYO ELECTRON LTD 发明人 HAYASHI DAISUKE;NAGASEKI KAZUYA
分类号 H01L21/3065 主分类号 H01L21/3065
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