| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of mainly suppressing defect caused by increase in an operational voltage and improving a production yield by increasing a conforming rate. SOLUTION: A nitride semiconductor device comprises a stem 40. A heatsink 20 is provided to the stem 40. At least one nitride semiconductor laser element 10 emitting a laser light is jointed to the heatsink 20. A light-detecting element 30 for observing intensity of the light from the nitride semiconductor laser element 10 is provided to the stem 40. A cap 50 for enclosing the heatsink 20, the nitride semiconductor laser element 10 and the light detecting element 30 in it is jointed to the stem 40. Enclosed atmosphere 80 is sealed in the space inside the cap 50. A component for suppressing a diffusion of hydrogen included in the nitride semiconductor laser element 10 is included in the sealed atmosphere 80. COPYRIGHT: (C)2008,JPO&INPIT
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