| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of an SRAM, including a plurality of memory cells and a local reading data amplification circuit connected to the memory cells through a bit line, that an area becomes larger if an MWELL separation region or an individual substrate contact region is provided between the plurality of memory cells and the local reading data amplification circuit, and the layout of the local reading amplification circuit and the memory cell array exceed an optical dummy region and the substrate contact region to interfere with each other in an exposure process as micronization of a process advances, resulting in larger variation in devices for degraded yield. SOLUTION: A plurality of memory cells, an MWELL separation region present on the interface between the memory cell and the local reading data amplification circuit connected through the bit line, and a substrate contact part are shared. The arrangement direction of gate electrodes is made identical to that of the memory cells. Thus, the area is saved and degradation of yield in a manufacturing process is suppressed. COPYRIGHT: (C)2008,JPO&INPIT
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