| 摘要 |
PROBLEM TO BE SOLVED: To prevent the surface of a backgate region other than a channel region from inverting by arranging a gate electrode in the channel region or drain region, thereby preventing occurrence of parasitic currents. SOLUTION: In the semiconductor device, an N-type diffusion layer 6 is formed as a source region so that it is convoluted with a P-type diffusion layer 5 as a backgate region. An N-type diffusion layer 7 is formed as a drain region so that it faces the N-type diffusion layer 6. A gate electrode 9 is arranged to cover the P-type diffusion layer 5 in the region where the N-type diffusion layers 6 and 7 face each other. Further, the gate electrode 9 is wired on the N-type diffusion layer 7. With this structure, a channel region is efficiently arranged to suppress occurrence of parasitic currents in the P-type diffusion layer, thereby preventing fluctuation in on-resistance value of an N-channel MOS transistor 1. COPYRIGHT: (C)2008,JPO&INPIT
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