发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To increase the array voltage or reduce the capacitance of a capacitive element for over-drive voltage in charge sharing overdrive in an early stage of an operation of the sense amplifier. SOLUTION: A first internal power source circuit 21 generating an overdrive voltage VOD and a second internal power source circuit 11 generating an array voltage VARY are prepared. The first internal power source circuit 21 is connected to the sense amplifier 12 during the overdrive from the sensing start until the first period passes, and the second internal power source circuit 11 is connected to the sense amplifier 12 after the first period has elapsed. The first internal power source circuit 21 is activated before the start of sensing and floated in a non-operation state after the charging is completed for the capacitive element 20. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008159188(A) 申请公布日期 2008.07.10
申请号 JP20060348112 申请日期 2006.12.25
申请人 ELPIDA MEMORY INC 发明人 OHATA MUNETOSHI;TERAMOTO KAZUHIRO;MOCHIDA NOBUAKI
分类号 G11C11/4091 主分类号 G11C11/4091
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