摘要 |
Disclosed is a process for a conductive metal plated polyimide substrate. The process for a conductive metal plated polyimide substrate comprises a) etching surface of the polyimide film with KOH, mixed solution of ethylene glycol and KOH, or mixed solution of CrO<SUB>3 </SUB>and H<SUB>2</SUB>SO<SUB>4</SUB>, b) coupling the etched surface of the polyimide film with a coupling agent, c) absorbing a catalyst on the polyimide film, d) plating a first conductive metal on the polyimide film which the catalyst was absorbed without applying current, to form a first conductive metal thin film, and e) plating a second conductive metal on the first conductive metal thin film with applying current, to form a second conductive metal thin film. |