发明名称 |
RESIN FILM EVALUATION METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a resin film evaluation method for evaluating the degenerated layer formed on the surface of a resin film such as a photoresist by charged energetic particles such as implantation ions in a simple and highly accurate manner, and to provide a method for manufacturing a semiconductor device applying the resin film evaluation method. SOLUTION: A resin film evaluation method includes steps of: irradiating with charged energetic particles 6 a substrate having a resin film 3 formed on an insulating layer 2 with an opening 4 in which the surface of the insulating layer 2 is exposed; measuring surface potentials of the substrate surface irradiated with the charged energetic particles 6; obtaining the difference in surface potential between the resin film 3 and the insulating film 2 exposed in the opening; and estimating a physical quantity such as the resin film residue count, which is obtained when a predetermined treatment is performed onto the resin film 3 irradiated with the charged energetic particles based on the difference in surface potential. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008160078(A) |
申请公布日期 |
2008.07.10 |
申请号 |
JP20070297688 |
申请日期 |
2007.11.16 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KAMIYANAGI TOSHIKO;SHIBATA SATOSHI;MIYAGAWA KOHEI;KANEKI REIKI |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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