发明名称 RESIN FILM EVALUATION METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a resin film evaluation method for evaluating the degenerated layer formed on the surface of a resin film such as a photoresist by charged energetic particles such as implantation ions in a simple and highly accurate manner, and to provide a method for manufacturing a semiconductor device applying the resin film evaluation method. SOLUTION: A resin film evaluation method includes steps of: irradiating with charged energetic particles 6 a substrate having a resin film 3 formed on an insulating layer 2 with an opening 4 in which the surface of the insulating layer 2 is exposed; measuring surface potentials of the substrate surface irradiated with the charged energetic particles 6; obtaining the difference in surface potential between the resin film 3 and the insulating film 2 exposed in the opening; and estimating a physical quantity such as the resin film residue count, which is obtained when a predetermined treatment is performed onto the resin film 3 irradiated with the charged energetic particles based on the difference in surface potential. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008160078(A) 申请公布日期 2008.07.10
申请号 JP20070297688 申请日期 2007.11.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAMIYANAGI TOSHIKO;SHIBATA SATOSHI;MIYAGAWA KOHEI;KANEKI REIKI
分类号 H01L21/027 主分类号 H01L21/027
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