| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a silicide film wherein a mask is formed by a small number of process, and a silicide is fabricated with small possibility of causing performance deterioration of a semiconductor element when reacting the silicide. SOLUTION: The method of manufacturing the semiconductor device includes the steps of preparing a semiconductor substrate having a silicon surface at least part of which is exposed, coating the exposed silicon surface to form a refractory metal nitride film, selectively removing at least part of the nitride film on the silicon surface, forming a nitride film pattern to coat the other part of the silicon surface in addition to exposing part thereof, and coating the nitride film pattern to form the refractroy metal film on the semiconductor substrate. Further, the method includes the steps of heat-treating and reacting the silicide between part of the silicon surface and refractroy metal film, and removing the unreacted refractory metal films and nitride film patterns thereon. COPYRIGHT: (C)2008,JPO&INPIT
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