发明名称 ELECTRODE PATTERNS FOR EVALUATION OF SEMICONDUCTOR LAYER, AND EVALUATING METHOD OF SEMICONDUCTOR LAYER USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide electrode patterns for evaluation to precisely evaluate volume resistivity and an effective thickness of a semiconductor layer at a surface side, in a semiconductor substrate in which the same conductive type semiconductor layers are formed into two layers, and also to provide an evaluating method of the semiconductor layers using it. SOLUTION: In the semiconductor substrate, the first conductive type first semiconductor layer 1a is formed on a surface portion, and the second semiconductor layer 1b which is higher in impurity concentration than the first conductive type first semiconductor layer 1a is formed under the first semiconductor layer 1a. A pair of the electrode patterns P1 to evaluate the volume resistivity of the first semiconductor layer 1a are provided, wherein an interval L1 of a pair of the electrode patterns P1 is set narrower than a design thickness D of the first semiconductor layer 1a. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008160041(A) 申请公布日期 2008.07.10
申请号 JP20060350419 申请日期 2006.12.26
申请人 DENSO CORP 发明人 KONO KENJI
分类号 H01L27/12;H01L21/66 主分类号 H01L27/12
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