| 摘要 |
PROBLEM TO BE SOLVED: To reduce electric power consumed by an internal voltage generating circuit during active standby of a semiconductor memory device. SOLUTION: The device is provided with memory banks BANK 0 to 3, a first internal voltage generating circuit VPERIACTG of which the one piece is allocated to the four memory banks, and second internal voltage generating circuit VPERIACTU1, VPRELACTD1 of which the one piece is allocated to two memory banks. The first internal voltage generating circuit supplies internal voltage VPERI when any of memory banks BANK 0 to 3 is in an active state, the second internal voltage generating circuit supplies internal voltage VPERI in a period in which any of the corresponding memory banks BANK0, 1 or any of BANK 2, 3 is in an active state also burst operation is performed. Thereby, such possibility is reduced that current standard during active standby is exceeded. COPYRIGHT: (C)2008,JPO&INPIT
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