| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing an optical biaxial single crystal characterized in that working of a grown optical biaxial single crystal is not complicated and the proportion of the grown optical biaxial single crystal to be actually used for devices to the grown optical biaxial single crystal is high, and to provide an optical biaxial single crystal produced by using the method. SOLUTION: In the method for growing the optical biaxial single crystal utilizing an EFG method comprising bringing a seed crystal 20 into contact with a heat-melted raw melt and growing a single crystal 21 into a thin plate form, the single crystal 21 is grown into the thin plate form by controlling the angleθ2 formed by a ridge line D in the longitudinal direction of rectangular dies which form a liquid reservoir for the raw melt and the optical axis L<SB>20</SB>of the seed crystal 20 to the range of 85°to 95°and controlling the angleθ1 formed by the optical axis L<SB>20</SB>of the seed crystal 20 and the direction Z of the pull-up shaft which pulls up the seed crystal 20 to the range of 85°to 95°. COPYRIGHT: (C)2008,JPO&INPIT
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