| 发明名称 |
SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATION THEREOF |
| 摘要 |
A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion.
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| 申请公布号 |
US2008166852(A1) |
申请公布日期 |
2008.07.10 |
| 申请号 |
US20080040076 |
申请日期 |
2008.02.29 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KAMIKAWA TAKESHI |
| 分类号 |
H01L21/77;H01S5/343;H01L21/00;H01S5/02;H01S5/22;H01S5/223 |
主分类号 |
H01L21/77 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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