Method of etching a metal oxide layer

摘要

A method of etching a metal oxide layer formed on a metal layer is provided. The method includes mounting a specimen having the metal oxide layer and a photoresist on the metal oxide layer in a reaction chamber, wherein the metal oxide layer is formed on the metal layer and a pattern is formed on the photoresist. Primary etching of the metal oxide layer exposed by the photoresist may be performed using Cl₂ gas in an inductively coupled plasma method. Secondary etching of residues remaining on an etched region of the metal oxide layer may be performed using BCl₃ gas in the inductively coupled plasma method.